kw.\*:("RTA")
Results 1 to 25 of 122
Selection :
Effect of annealing on composition, structure and optical properties of SrHfON thin filmsFENG, Li-Ping; WANG, Yin-Quan; HAO TIAN et al.Applied surface science. 2012, Vol 258, Num 24, pp 9706-9710, issn 0169-4332, 5 p.Article
A queueing system with returning customers and waiting lineARTALEJO, J. R.Operations research letters. 1995, Vol 17, Num 4, pp 191-199, issn 0167-6377Article
High quality silicon-based PZT thin films for memory applicationsSHAO, Tian-Qi; REN, Tian-Ling; WANG, Xiao-Ning et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 713-718, issn 0167-9317, 6 p.Conference Paper
Radiotéléphone automatique à relais communs = Automatic radiotelephone with common relaysCANITROT, M.Onde électrique. 1984, Vol 64, Num 3, pp 41-46, issn 0030-2430Article
A combination of two immunotoxins exerts synergistic cytotoxic activity against human breast-cancer cell linesCREWS, J. R; MAIER, L. A; BAST, R. C et al.International journal of cancer. 1992, Vol 51, Num 5, pp 772-779, issn 0020-7136Article
RTA, a candidate G protein-coupled receptor: cloning, sequencing, and tissue distributionROSS, P. C; FIGLER, R. A; CORJAY, M. H et al.Proceedings of the National Academy of Sciences of the United States of America. 1990, Vol 87, Num 8, pp 3052-3056, issn 0027-8424Article
Concepto de «Rta» en el Rg Veda = The concept of «Rtá» in the Rg VedaDE CHELMICKI, H. I. C.{136' Ilu (Madrid). 1999, Num 4, pp 25-56, issn 1135-4712Article
Characterization of electrically inactive arsenic atoms in heavily arsenic-doped SiKIKUCHI, Y; GOTO, Y.Surface and interface analysis. 2005, Vol 37, Num 2, pp 201-203, issn 0142-2421, 3 p.Conference Paper
Fabrication of L12―CrPt3 Alloy Films Using Rapid Thermal Annealing for Planar Bit Patterned MediaKATO, Takeshi; OSHIMA, Daiki; YAMAUCHI, Yukihiro et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 1671-1674, issn 0018-9464, 4 p.Conference Paper
Analytical expression for the bias and frequency-dependent capacitance of MOS4 varactorsGILDENBLAT, G; ZHU, Z; WU, W et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 11, pp 3107-3108, issn 0018-9383, 2 p.Article
Effect of crystal structure on optical properties of sol―gel derived zirconia thin filmsXIAODONG WANG; GUANGMING WU; BIN ZHOU et al.Journal of alloys and compounds. 2013, Vol 556, pp 182-187, issn 0925-8388, 6 p.Article
Preparation of Cu2ZnSnS4 thin films via electrochemical deposition and rapid thermal annealingKEE DOO LEE; SEO, Se-Won; LEE, Doh-Kwon et al.Thin solid films. 2013, Vol 546, pp 294-298, issn 0040-6090, 5 p.Conference Paper
PECVD oxide as intermediate film for wafer bonding: Impact of residual stressOLBRECHTS, Benoit; RASKIN, Jean-Pierre.Microelectronic engineering. 2010, Vol 87, Num 11, pp 2178-2186, issn 0167-9317, 9 p.Article
Conduction mechanisms in Ta2O5 stack in response to rapid thermal annealingSPASSOV, D; ATANASSOVA, E.Microelectronic engineering. 2008, Vol 85, Num 1, pp 214-222, issn 0167-9317, 9 p.Article
Investigations on the nucleation thermodynamics of RbTiOXO4(x= P or As) crystals grown from high temperature solutionKANNAN, C. V; GANESAMOORTHY, S; SUBRAMANIAN, C et al.Crystal research and technology (1979). 2002, Vol 37, Num 11, pp 1180-1187, issn 0232-1300, 8 p.Article
Clinical and Etiological Profile of Refractory Rickets from Western IndiaJOSHI, Rajesh R; PATIL, Shailesh; RAO, Sudha et al.Indian journal of pediatrics. 2013, Vol 80, Num 7, pp 565-569, issn 0019-5456, 5 p.Article
Influence of Annealing Process on Crystalline, Microstructure, and Ferroelectric Properties of PSTT5 Thin FilmsXUEDONG LI; YUCHENG SUN; HONG LIU et al.Ferroelectrics (Print). 2009, Vol 384, pp 1040-1045, issn 0015-0193, 6 p.Conference Paper
Effects of annealing temperature and method on structural and optical properties of TiO2 films prepared by RF magnetron sputtering at room temperatureYOO, Dongsun; KIM, Ilgon; KIM, Sangsoo et al.Applied surface science. 2007, Vol 253, Num 8, pp 3888-3892, issn 0169-4332, 5 p.Article
Optical properties of LiTaO3 thin films crystallized by RTA processesYOUNG, San-Lin; KAO, Ming-Cheng; CHEN, Hone-Zern et al.Journal of electroceramics. 2006, Vol 17, Num 2-4, pp 799-803, issn 1385-3449, 5 p.Conference Paper
Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin filmsDAOUDI, K; SANDU, C. S; TEODORESCU, V. S et al.Crystal engineering. 2002, Vol 5, Num 3-4, pp 187-193, issn 1463-0184, 7 p.Conference Paper
Effect of rapid thermal reoxidation on the electrical properties of rapid thermally nitrited thin-gate oxidesJOSHI, A. B; LO, G. O; SHIH, D. K et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 4, pp 883-892, issn 0018-9383Article
Hydrogen ion sensing characteristics of IGZO/Si electrode in EGFETYANG, Chia-Ming; WANG, Jer-Chyi; CHIANG, Tzu-Wen et al.International journal of nanotechnology. 2014, Vol 11, Num 1-4, pp 15-26, issn 1475-7435, 12 p.Conference Paper
High responsivity MSM black silicon photodetectorYUANJIE SU; SHIBIN LI; ZHIMING WU et al.Materials science in semiconductor processing. 2013, Vol 16, Num 3, pp 619-624, issn 1369-8001, 6 p.Article
Rapid thermal annealing treatment of ZnO: Al films for photovoltaic applicationsZEGUO TANG; KOSHINO, Hideto; SATO, Shunsuke et al.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2501-2503, issn 0022-3093, 3 p.Conference Paper
Are badgers 'Under The Weather'? Direct and indirect impacts of climate variation on European badger (Meles meles) population dynamicsMACDONALD, David W; NEWMAN, Christopher; BUESCHING, Christina D et al.Global change biology (Print). 2010, Vol 16, Num 11, pp 2913-2922, issn 1354-1013, 10 p.Article